dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 1 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol mdp 16n50g mdf 16n50g unit drain - source voltage v dss 500 v drain - source voltage @ tjmax v dss @ t jmax 55 0 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d 16 16* a t c = 10 0 o c 10.1 10.1* a pulsed drain current (1) i dm 64 64* a power dissipation t c =25 o c p d 204.9 49.4 w w/ o c derate above 25 o c 1.64 0.39 repetitive avalanche energy (1) e ar 20.5 mj peak diode recovery dv/dt (3) d v/dt 4.5 v/ns single pulse avalanche energy (4) e as 780 mj junction and storage temperature range t j , t stg - 55~150 o c * id limited by maximum junction temperature thermal characteristics characteristics symb ol mdp 16n50g mdf 16n50g unit thermal resistance, junction - to - ambient (1) r ja 62.5 62.5 o c/w thermal resistance, junction - to - case (1) r jc 0.61 2.53 md p 16n50g / mdf 16n50g n - channel mosfet 500 v, 1 6 .0 a, 0. 35 ? features ? ds = 500 v ? ds = 550v @ tjmax ? d = 1 6 a @v gs = 10v ? ds(on) gs = 10v applications ? ? ? general description the se n - channel mosfet are produced using advanced magnachips mosfet technology, which provides low on - state resistance, high switching performance and excellent quality. these devices are suitable device for smps, high speed swit ching and general purpose applications . to - 220f mdf series to - 220 mdp series d g s
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 2 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v ordering information p art number temp. range package packing rohs status md p 16n50g th - 55~150 o c to - 220 tube halogen free md f 16n50g th - 55~150 o c to - 220f tube halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 500 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 2 50a 3.0 - 5.0 drain cut - off current i dss v ds = 500 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 30 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds(on) v gs = 10v, i d = 8 a 0. 30 0. 35 forward transconductance g fs v ds = 3 0 v, i d = 8 a - 14.8 - s dynamic characteristics total gate charge q g v ds = 400 v, i d = 1 6 a , v g s = 10 v (3 ) - 34.9 nc gate - source charge q gs - 12.4 gate - drain charge q gd - 14.2 input capacitance c iss v ds = 2 5v, v gs = 0v, f = 1.0mhz - 1724 p f reverse transfer capacitance c rss - 8.3 output capacitance c oss - 226 turn - on delay time t d(on) v gs = 10v, v ds = 250 v, i d = 1 6 a , r g = 25 (3 ) - 46 ns rise time t r - 88.5 t ur n - off delay time t d(off) - 96.5 fall time t f - 41 drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 16 - a source - drain diode forward voltage v sd i s = 1 6 a , v gs = 0v - 1. 4 v body diode reverse recovery time t rr i f = 1 6 a , dl/dt = 100a/s (3 ) - 325 ns body diode reverse recovery charge q rr - 3.34 c note s : 1. p ulse width is based on r j c & r j a and the maximum allowed junction temperatu re of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature tj(max)=150 c. 3. i s d 16 .0 a, di/dt 200a/us, v dd =50v, r g =25 , starting tj=25 c 4. l=5. 48 mh, i as = 1 6 .0a, v dd =50v , r g =25 , starting tj=25 c
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 3 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - r esistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig . 6 body diode forward voltage variation with source current and temperature 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 0 10 20 0 5 10 15 20 25 30 35 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 4 5 6 7 8 9 1 10 -55 25 * notes ; 1. v ds =30v 150 i d [a] v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 25 o c 150 o c notes : 1. v gs = 0 v 2. 250 ? i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 8a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 4 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area mdp 16n50g (to - 220) fig. 10 maximum drain current v s. case temperature fig. 11 transient thermal response curve mdp 16n50g (to - 220) fig .12 single pul se maximum power dissipation mdp 16n50g (to - 220) 0 5 10 15 20 25 30 35 0 2 4 6 8 10 100v 250v 400v note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1e-5 1e-4 1e-3 0.01 0.1 1 0 3000 6000 9000 12000 15000 18000 21000 24000 single pulse r thjc = 0.61 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.61 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 1e11 1e12 1e13 0 500 1000 1500 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 5 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v fig. 11 transient thermal response curve mdf 16n50g ( to - 220f) fig. 13 maximum safe operating area mdf 16n50g (to - 220f) fig .12 single pulse maximum power dissipation mdf 16n50g (to - 220f) 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1 s 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1e-5 1e-4 1e-3 0.01 0.1 1 0 3000 6000 9000 12000 15000 single pulse r thjc = 2.53 t c = 25 power (w) pulse width (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =2.53 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec]
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 6 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v ? physical dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 7 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v ? physical dimension 3 leads , to - 220f d imensions are in millimeters unless otherwise specified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
dec. 20 1 4 . version 1 . 1 magnachip semiconductor ltd . 8 md p 1 6 n50 g/mdf1 6 n50g n - channel mosfet 50 0 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reaso nably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change th e specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor lt d.
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